Title of article
Resonant tunnelling leakage in planar metal–oxide–metal nanojunctions
Author/Authors
Maruccio، نويسنده , , G. and Visconti، نويسنده , , P. and Calogiuri، نويسنده , , P. and DʹAmone، نويسنده , , E. and Cingolani، نويسنده , , R. and Rinaldi، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
1039
To page
1042
Abstract
The leakage–current in planar nanojunctions, usually employed to realize molecular field-effect devices, is investigated. Resonances are observed on p-doped substrates when the voltage drop between drain and gate electrodes is around 1.1 V. These resonances are related to resonant tunneling via impurity atoms and are otherwise not observed on n-type substrates.
Keywords
NANOTECHNOLOGY , Downsizing , Leakage
Journal title
Materials Science and Engineering C
Serial Year
2003
Journal title
Materials Science and Engineering C
Record number
2098228
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