Magnetoresistance due to domain walls in semiconducting magnetic nanostructures

Magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall is analyzed theoretically in the limit of sharp domain walls and fully polarized electron gas is considered. The spin–orbit interaction of Rashba type is included into considerations. It is shown that the magnetoresistance in such a case can be relatively large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin–orbit interaction can enhance the magnetoresistance. The role of localization corrections is also briefly discussed.