Schematics and simulations of nanomemory device based on nanopeapods

We investigated endo-fullerene shuttle memory elements based on carbon and boron-nitride nanopeapods using atomistic simulations. The systems proposed could operate nonvolatile nanomemory devices or three-terminal nanoswitching devices when the positions of ionized endo-fullerenes were controlled by gate bias. This work shows a probability of nano-electromechanical memory elements based on nanopeapods in the nanometer ranges, especially, when the electronic properties of boron nitride nanotubes are modified by the fullerene encapsulations.