Title of article
Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings
Author/Authors
W. Ouerghui، نويسنده , , W. and Melliti، نويسنده , , A. and Maaref، نويسنده , , M.A. and Martinez-Pastor، نويسنده , , J. and Gomis، نويسنده , , J. and Granados، نويسنده , , D. and Garcia، نويسنده , , J.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
297
To page
299
Abstract
We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy.
Keywords
Quantum rings , Vertical stack , Photoluminescence
Journal title
Materials Science and Engineering C
Serial Year
2006
Journal title
Materials Science and Engineering C
Record number
2098665
Link To Document