Frequency effect on the metal/polysilicon/oxide/silicon capacitance

In this work, we have studied the frequency effect on the metal/polysilicon/oxide/silicon (MSPOS) structure. We present the capacitance–voltage (C–V) characteristics at four frequencies (10 kHz, 100 kHz, 400 kHz and 1 MHz). The results show that the C–V curves have dispersion when the frequency decreases. The increase of the frequencies translates the CT(V) curve towards negative voltages and causes the decrease of the minimum value of capacitance. The variation of the capacitance for low frequencies is less important compared to that of the high frequencies.