Title of article
Geometry dependent nucleation mechanism for SiGe islands grown on pit-patterned Si(001) substrates
Author/Authors
Chen، نويسنده , , Gang and Lichtenberger، نويسنده , , Herbert and Schaffler، نويسنده , , Friedrich and Bauer، نويسنده , , Günther and Jantsch، نويسنده , , Wolfgang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
795
To page
799
Abstract
SiGe islands grown on pit-patterned Si(001) substrates show significant dependence on the surface geometry of the substrate, especially when the period of the patterning is reduced to below 300 nm. With different geometry of pit-patterned substrates, SiGe islands are observed to preferentially nucleate at the bottom of shallow pits after a ripple formation of the SiGe wetting layer, or at the top terrace when the pits are deep and steep.
Keywords
Silicon , Germanium , Quantum dot array , Nanopatterning
Journal title
Materials Science and Engineering C
Serial Year
2006
Journal title
Materials Science and Engineering C
Record number
2098828
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