Title of article
Raman studies of selenium nanowires under high pressure
Author/Authors
Dai، نويسنده , , R.C. and Luo، نويسنده , , L.B. and Zhang، نويسنده , , Z.M. and Ding، نويسنده , , Z.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
350
To page
354
Abstract
The selenium nanowires with diameter of 70 nm and length of 40 μm were synthesized by a facile solution method. High-pressure behavior of Se nanowires has been investigated by in situ Raman scattering up to 20.2 GPa at room temperature. A reversible phase transition from hexagonal to monoclinic occurs at 18.1 GPa. This transition pressure is higher than that of 14.0 GPa for bulk Se. The intrinsic geometry and/or the increasing energy band gap of Se nanowires are considered to contribute to the increase of transition pressure.
Keywords
C. Raman spectroscopy , A. Semiconductor , C. High pressure , A. Nanostructures
Journal title
Materials Research Bulletin
Serial Year
2011
Journal title
Materials Research Bulletin
Record number
2100686
Link To Document