Title of article
Mechanical properties and indentation-induced damage of high-quality ZnO microwires
Author/Authors
Liu، نويسنده , , Zhiwei and Yan، نويسنده , , Xiaoqin and Lin، نويسنده , , Zhi and Huang، نويسنده , , Yunhua and Liu، نويسنده , , Hanshuo and Zhang، نويسنده , , Yue، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
750
To page
754
Abstract
In this paper, we aim to discover the mechanics-related novel phenomena on high-quality ZnO microwires through nanoindentation method. The mechanical property parameters of ZnO microwires were determined and a distinctive creep damage phenomenon was revealed. By using the cycles load mode in the nanoindentation experiments, the indentation size effect was demonstrated to exist in the ZnO microwires: the elastic modulus ranged from 65.9 GPa to 12.3 GPa and the hardness changed from 11.1 GPa to 1.8 GPa with the increase of indentation depth. Furthermore, the indentation-induced mechanical and electrical damage caused a permanent plastic deformation and an increase of 41% in the longitudinal conductance of the ZnO microwires.
Keywords
A. Semiconductors , B. vapor deposition , A. Oxides , D. Mechanical properties
Journal title
Materials Research Bulletin
Serial Year
2012
Journal title
Materials Research Bulletin
Record number
2101699
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