Title of article
Aqueous chemical growth of Cu2ZnSnS4 (CZTS) thin films: Air annealing and photoelectrochemical properties
Author/Authors
Shinde، نويسنده , , N.M. and Deshmukh، نويسنده , , P.R and Patil، نويسنده , , S.V. and Lokhande، نويسنده , , C.D.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
7
From page
1760
To page
1766
Abstract
In present investigation, Cu2ZnSnS4 (CZTS) thin films have been deposited on to glass substrates by novel chemical successive ionic layer adsorption and reaction (SILAR) method. The effect of air annealing in the temperature range between 573 and 773 K on the structural, morphological, optical and electrical properties has been studied. The X-ray diffraction studies revealed the formation of polycrystalline CZTS films. The surface morphological study showed smooth, compact and uniform film formation after annealing formation. The band gap was in between range from 1.5 to 1.8 eV depending on annealing temperature. The thermo emf measurement revealed that the CZTS exhibits p-type electrical conductivity. Further, photoactivity of CZTS thin films was tested by forming the photoelectrochemical cell.
Keywords
X-ray diffraction , Optical properties , Cu2ZnSnS4 , Thin film , chemical synthesis
Journal title
Materials Research Bulletin
Serial Year
2013
Journal title
Materials Research Bulletin
Record number
2103503
Link To Document