Charge defects-induced electrical properties in bismuth ferrite bilayered thin films

Effects of charge defects on electrical properties of BiFeO3/Bi0.90La0.10Fe0.85Zn0.15O3 (BFO/BLFZO) bilayered thin films are investigated, and the concentration of charge defects is controlled by changing their deposition temperatures during sputtering. It is of great interest to note that these bilayers endure an orientation transition from (1 0 0) to (1 1 0) with increasing deposition temperatures. An enhanced dielectric, ferroelectric, and fatigue behavior has been demonstrated in these bilayers deposited at an optimum growth window. A better electrical behavior of 2Pr ~ 138.2 μC/cm2, 2Ec ~ 657.3 kV/cm, εr ~ 189, and tan δ ~ 2.72% has been demonstrated in BFO/BLFZO bilayers, and the underlying physical mechanism is also addressed.