Title of article
Luminescence and radiation resistance of undoped NaI crystals
Author/Authors
Shiran، نويسنده , , N. and Boiaryntseva، نويسنده , , I. and Gektin، نويسنده , , A. and Gridin، نويسنده , , S. and Shlyakhturov، نويسنده , , V. and Vasuykov، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
5
From page
13
To page
17
Abstract
Undoped NaI single crystal is an excellent scintillator at low temperature. However, scintillation parameters of different quality crystals vary in a wide range, significantly exceeding measurement error. Experimental data demonstrate the features of luminescence, radiation induced coloration, and afterglow dependence on the quality of nominally pure crystals. It is found that defects level that allows to elucidate artefacts introduced by traces of harmful impurities corresponds to 3 × 1015 cm−3 that significantly overhead accuracy of chemical and absorption analysis. It is shown that special raw material treatment before and during the single crystal growth allows to reach NaI purity level that avoids impurities influence to the basic luminescence data.
Keywords
B. Crystal growth , D. Defects , A. Halide , B. Luminescence , D. Radiation damage
Journal title
Materials Research Bulletin
Serial Year
2014
Journal title
Materials Research Bulletin
Record number
2105567
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