• Title of article

    Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

  • Author/Authors

    Ouyang، نويسنده , , Pan-He Zhang، نويسنده , , Hong and Chen، نويسنده , , Wenhao and Wang، نويسنده , , Ying and Zhang، نويسنده , , Yu and Li، نويسنده , , Zhicheng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2015
  • Pages
    7
  • From page
    9
  • To page
    15
  • Abstract
    Sb-doped SnO2 (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g−1 at 100 mA g−1 after 200 charge–discharge cycles and high rate performance of 483 mA h g−1 at 800 mA g−1. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO2 reacted with Li+ to produce metallic Sn and followed by the formation of the LixSn alloys during discharge process, and then LixSn alloys de-alloyed, Sn reacted with Li2O, and even partially formed SnO2 during charge process.
  • Keywords
    Electrochemical performance , Phase evolution , Magnetron sputtering , Electrochemical mechanism , ATO thin film
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2015
  • Journal title
    Materials Research Bulletin
  • Record number

    2105935