Title of article
Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction
Author/Authors
Liang، نويسنده , , Xianqing and Zhong، نويسنده , , Jun and Shi، نويسنده , , Yalin and Guo، نويسنده , , Jin and Huang، نويسنده , , Guolong and Hong، نويسنده , , Caihao and Zhao، نويسنده , , Yidong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2015
Pages
7
From page
252
To page
258
Abstract
Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications.
Keywords
D. Electronic structure , A. Nanostructures , B. Chemical synthesis , C. Photoelectron spectroscopy , C. XAFS (EXAFS and XANES)
Journal title
Materials Research Bulletin
Serial Year
2015
Journal title
Materials Research Bulletin
Record number
2105974
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