Chemical route for Si/C coated germanium nanowires

Chemical processes in course of low pressure CVD of tris(trimethylsilyl)germane (SiCH3)3GeH leading to formation of shelled germanium nanowires are discussed. The nanowires were grown in the flow mode at 50–60 Pa and 365 °C of substrate temperature. The wires consist of a crystalline Ge core surrounded by a two-layer jacket. FTIR measurements and GC–MS analysis let conclude that precursor decomposition starts by an intramolecular elimination of trimethylsilane HSiMe3 yielding bis(trimethylsilyl)germylene (SiMe3)2Ge: that polymerizes. Parallely, Si–Ge bonds split, SiC based moieties form Si/C shell and Ge atoms crystalline core and nanocrystalline inner jacket. The samples were studied by SEM, HRTEM, EDX, FTIR and GC–MS techniques.