• Title of article

    III–V semiconductor properties for high temperature electronics

  • Author/Authors

    Hartnagel، نويسنده , , Hans L.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    7
  • From page
    47
  • To page
    53
  • Abstract
    A reliabily operating electronic circuitry for environmental temperatures up to 500 °C requires a satisfactorily wide energy gap, a good material stability and a suitable technology. These three points are reviewed regarding III–V semiconductors. Experimental results with AlxGa1−xAs are reviewed, which are usually monolithically associated with various types of sensors.
  • Keywords
    Heterostructures , High temperature electronics , Gallium arsenide , Sensors
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1995
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2130807

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2130807