• Title of article

    Photoluminescence of piezoelectric strained InGaAsGaAs multi-quantum well p-i-n structures

  • Author/Authors

    David، نويسنده , , J.P.R. and Sale، نويسنده , , T.E. and Pabla، نويسنده , , A.S. and Rodrيquez-Gironés، نويسنده , , P.J. and Woodhead، نويسنده , , J. and Grey، نويسنده , , R. and Rees، نويسنده , , G.J. and Robson، نويسنده , , P.N. and Skolnick، نويسنده , , M.S. and Hogg، نويسنده , , R.A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    5
  • From page
    42
  • To page
    46
  • Abstract
    We have studied the room temperature (RT) photoluminescence (PL) in a series of InGaAsGaAs structures grown on (111)B GaAs substrates. Unlike conventional (100) grown multi-quantum well (MQW) p-i-n structures, the RT PL peak position and lineshape in (111)B grown structures are determined by details of the barrier width, intrinsic region thickness and number of wells. The PL is also found to be extremely sensitive to excitation power, making interpretation of the results complicated.
  • Keywords
    P-i-N diodes , Semiconductors , Piezoelectric , (111)B
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1995
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2131250

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2131250