Title of article
Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3° toward (111)A by molecular beam epitaxy
Author/Authors
Nakashima، نويسنده , , Hisao and Takeuchi، نويسنده , , Misaichi and Sato، نويسنده , , Kazuki and Shiba، نويسنده , , Kazuhiro and Huang، نويسنده , , Hu Kum and Maehashi، نويسنده , , Kenzo and Inoue، نويسنده , , Koichi and Christen، نويسنده , , Jürgen and Grundmann، نويسنده , , Marius and Bimberg، نويسنده , , Dieter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
4
From page
295
To page
298
Abstract
We have studied the effects of the off angle on the formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented toward (111)A by molecular beam epitaxy. Atomic force microscopy reveals that the 3° off sample has wider terraces and more coherent giant steps than the 6° off sample. The narrower luminescence band for the 3° off sample indicates that the wire structure of this sample is more uniform than that of the 6° off sample. Well-resolved cathodoluminescence images of GaAs quantum wires on the 3° off surface clearly reveal the formation of quantum wires.
Keywords
quantum effects , Optical properties , Molecular Beam Epitaxy , Gallium arsenide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131301
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