Title of article
Ge composition dependence of photoluminescence properties of Si1−xGexSi disordered superlattices
Author/Authors
Wakahara، نويسنده , , Akihiro and Kuramoto، نويسنده , , Kyosuke and Nomura، نويسنده , , Yoshihiro and Sasaki، نويسنده , , Akio، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
6
From page
479
To page
484
Abstract
Photoluminescence (PL) properties of Si1−xGexSi disordered superlattices (d-SLs) with various Ge compositions (x < 0.55) are studied. Thermal quenching properties and excitation power dependence of PL properties are investigated for the estimation of the disorder strength and for the assignment of the luminescence process, respectively. The red-shift energy of PL peak, PL intensity ratio I(d-SL)I(o-SL), and the characteristic temperature T0 become large by increasing the Ge composition. Improvement of the PL properties are owing to the strong hole localization effect.
Keywords
SiGe , Molecular Beam Epitaxy , Photoluminescence , superlattices
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131337
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