Title of article
Stress-induced oxygen precipitation in CzSi
Author/Authors
Misiuk، نويسنده , , A. and Surma، نويسنده , , B. and Hartwig، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
3
From page
30
To page
32
Abstract
Stress-induced oxygen precipitation effects in silicon were investigated after annealing as-grown CzSi samples at up to 1620 K under hydrostatic pressure up to 1.35 × 109 Pa. Depending on the treatment conditions, uniform stress can considerably influence oxygen precipitation. An explanation of stress-stimulated oxygen precipitation is proposed.
Keywords
high pressure , Silicon , oxygen precipitation , Defect formation
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131348
Link To Document