Title of article
Oxygen related defects in germanium
Author/Authors
Clauws، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
8
From page
213
To page
220
Abstract
Spectroscopic investigations during the last decade have resulted in a detailed picture of oxygen related defects in germanium such as oxygen interstitials and thermal donors. The results are summarized and compared with those of equivalent centres in silicon. The many similarities suggest that unified models for the major oxygen defects in the two semiconductors may apply.
Keywords
Silicon , Germanium , infrared spectroscopy , Oxygen
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131389
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