From atomic parameters to anisotropic etching diagrams

A Monte Carlo program and a program based on the formula of the evolution of atom disappearance probabilities were used for the simulation of anisotropic etching of silicon-like crystal dots containing several thousands of atoms. An additional program extracts the local values of the etching rates and represents them in polar diagrams. The obtained figures respect the symmetry of the crystal, but the etching diagrams can be multiple valued and may bear specific distortions due to the limited extent of the considered crystal dots.