Friction force microscopy characterization of semiconductor heterostructures

Measurement of frictional forces in a scanning force microscopy has been applied to perform compositional characterization of semiconductor heterostructures. Semiconductor interfaces as well as multiquantum wells are resolved with 3 nm of spatial resolution. The chemical sensitivity of this method is studied by imaging a step graded InxGa1−xAs sample. Changes of 10% in indium (or gallium) composition are detected. These results point out the potential of friction force microscopy for simultaneous topography and compositional characterization of semiconductor materials.