Title of article
Device characteristics of green II–VI semiconductor lasers
Author/Authors
Buijs، نويسنده , , M. and Haberern، نويسنده , , K.W. and Marshall، نويسنده , , T. and Gaines، نويسنده , , J.M. and Law، نويسنده , , K.K. and Baude، نويسنده , , P.F. and Miller، نويسنده , , TJ. and Haase، نويسنده , , M.A. and Haugen، نويسنده , , G.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
49
To page
54
Abstract
We have studied the device properties of blue-green II–VI lasers pertaining to the issues of thermal effects, leakage current and lateral waveguiding. Improved heat sinking by epi-down mounting was found to double the device lifetime. Leakage, mainly consisting of drift currents, is caused by the low p-type dopability of quaternary II–VI materials. This worsens on the lasing wavelength shortens. Although thermal index guiding was found to reduce the astigmatism of gain-guided lasers, index guiding by a built-in refractive index profile is necessary to obtain astigmatism values suitable for optical recording.
Keywords
Lateral waveguiding , Heat sinking , Thermal effects , Green II–VI semiconductor lasers , Leakage Current , Astigmatism
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131995
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