Title of article
Molecular beam epitaxy of Be-related II–VI compounds
Author/Authors
Litz، نويسنده , , T. and Lugauer، نويسنده , , H.J. and Fischer، نويسنده , , F. and Zehnder، نويسنده , , U. and Lunz، نويسنده , , U. and Gerhard، نويسنده , , T. and Ress، نويسنده , , H. and Waag، نويسنده , , A. and Landwehr، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
83
To page
87
Abstract
This article will give a short overview about some aspects of the molecular beam epitaxy (MBE) of Be-containing II–VI compounds on GaAs substrates. BeTe, BeMgTe, BeMgZnSe, BeZnSeTe, BeZnCdSe layers and ZnSe-BeTe superlattices have been produced. The growth regime and some properties of these new materials will be presented here.
Keywords
laser diodes , Molecular Beam Epitaxy , Be-related II–VI compounds
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132008
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