Title of article
Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations
Author/Authors
Middleton، نويسنده , , P.G. and Trager-Cowan، نويسنده , , C. and OʹDonnell، نويسنده , , K.P. and Cheng، نويسنده , , T.S. and Hooper، نويسنده , , S.E. and Foxon، نويسنده , , C.T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
154
To page
156
Abstract
Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (111)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.
Keywords
substrates , Molecular Beam Epitaxy , Photoluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132037
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