Title of article
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Author/Authors
Vermaut، نويسنده , , P. and Ruterana، نويسنده , , P. and Nouet، نويسنده , , G. and Salvador، نويسنده , , A. and Morkoç، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
279
To page
282
Abstract
The atomic structure of the prismatic defects in GaN layers grown on 6H-SiC by electron cyclotron assisted MBE has been determined. High resolution images have been matched to Drumʹs model, which, along the [0001] projection, corresponds to 8 and 4 atoms cycles. The 1/2〈101〉 fault vector is parallel to the fault plane.
Keywords
Molecular Beam Epitaxy , Prismatic defects , Gallium nitride
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132097
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