Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers

Recently, we demonstrated the potential of room temperature spectrally integrated scanning photoluminescence (SPL) measurements for mapping the lifetime and the doping density in bulk compound semiconductor substrates. In this work, the possibilities of our new technique are extended for mapping the lifetime and the doping uniformity in single epitaxial layers or layer of a narrow bandgap semiconductor located between two layers of semiconductors with a larger gap. In particular, we present and discuss experimental results obtained on InGaAs/InP and InP/InGaAs/InP structures.