Title of article
Assessment of compensation ratio in high-purity GaAs using photoluminescence
Author/Authors
Oelgart، نويسنده , , G. and Grنmlich، نويسنده , , S. and Bergunde، نويسنده , , T. and Richter، نويسنده , , E. and Weyers، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
228
To page
232
Abstract
The compensation ratio in high-purity n-type GaAs layers grown by metal-organic vapour phase epitaxy was determined from low-temperature photoluminescence measurements using the intensity ratio of the acceptor- and donor-bound excitonic transitions. The compensation ratio decreases with increasing V-III ratio. At high V-III ratio, a total acceptor content of below 1 × 10−13 cm−3 is found.
Keywords
Compensation ratio , Metal-organic vapor phase epitaxy , Photoluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132224
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