Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect

An ion implantation simulator for single crystal 6H-SiC is presented. This simulator uses a Montecarlo method together with either physically based or semiempirical models to calculate the slowing down of the incoming ions in the crystal. Channeling effect, which appears not to be negligible in SiC single crystal for standard ion implantation conditions, arises naturally as a consequence of the crystal structure and valence electrons distribution. The effect of a native oxide, dynamical amorphization and thermal vibration of the lattice atoms, which affect the channeling behavior of the ions, are also included in the simulation. Recent models for electronic stopping are also used. After calibration, the simulation profiles show good agreement with published SIMS profiles.