Title of article
Chemical bevelling of GaAs-based structures
Author/Authors
Srnanek، نويسنده , , R and Novotny، نويسنده , , I and Hotovy، نويسنده , , I and Gomati، نويسنده , , M.El، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
127
To page
130
Abstract
By using H3PO4/H2O2/H2O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10−4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.
Keywords
Gallium arsenide , Optical interference microscopy , Chemical bevelling
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132475
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