Title of article
Gain spectra in cw InGaN/GaN MQW laser diodes
Author/Authors
Deguchi، نويسنده , , T and Azuhata، نويسنده , , T and Sota، نويسنده , , T and Chichibu، نويسنده , , S and Nakamura، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
251
To page
255
Abstract
A systematic study on the optical gain of continuous wave InGaN/GaN multiple quantum well laser diode wafers has been achieved by means of the variable excitation-stripe length (VEL) method. It will be demonstrated that mechanisms producing optical gain may vary according to the degree of fluctuation of InGaN composition in the lateral plane.
Keywords
Compositional fluctuation , laser diodes , optical gain
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132869
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