Title of article
Near field optical spectroscopy of resonant tunnelling light-emitters
Author/Authors
Mielants، نويسنده , , Mieke and Van Hoof، نويسنده , , C and Stuer، نويسنده , , C and Goovaerts، نويسنده , , E and Borghs، نويسنده , , G، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
3
From page
9
To page
11
Abstract
Optical spectroscopy of resonant tunneling light-emitters has yielded relevant information on the charge and electric-field distribution in and across these devices but due to far-field collection of the light-emission, local intensity or field distributions could not be measured. We have carried out collection-mode near-field scanning optical microscopy of resonant tunneling light emitting devices and the intensity distribution of the near-field reveals electric field inhomogeneities across the optical window. In addition, the near-field spectra show the lateral electric field distribution from the quantum-confined Stark effect. Field variations of 15 kV cm−1 across the optical window of 70 μm devices were measured. Routine analysis of spectral lineshapes from the spatially-averaged far-field spectra therefore introduces significant error solved only by the use of local probing.
Keywords
Ultramicroscopy , resonant tunneling devices , Electric-field distribution , near-field optical microscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132914
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