Title of article
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Author/Authors
Nakashima، نويسنده , , Hisao and Kato، نويسنده , , Takehiko and Maehashi، نويسنده , , Kenzo and Nishida، نويسنده , , Takehiro and Inoue، نويسنده , , Yoshiji and Takeuchi، نويسنده , , Toshikazu and Inoue، نويسنده , , Koichi and Fischer، نويسنده , , Peter and Christen، نويسنده , , Jürgen and Grundmann، نويسنده , , Marius and Bimberg، نويسنده , , Dieter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
229
To page
232
Abstract
GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements.
Keywords
Growth interruption , cathodoluminescence , Photoluminescence , Vicinal surface , GaAs quantum wire , Molecular Beam Epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133043
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