Analysis of properties of ion implanted planar optical waveguides in Cr:KTiOPO4 and Er:KTiOPO4

Two planar optical waveguides in Cr:KTiOPO4 and Er:KTiOPO4 were formed by implantation of MeV He ions. The dose of implanted He ions was 1.4×1016 ions cm−2 by an energy of 2.8 MeV at 300 K. The dark modes were measured by using the standard dark modes measurement technique involving an isosceles prism (LiTaO3). The refractive index profiles of the waveguide were analyzed by using parametrized index profile reconstruction (PIPR) methods. The lattice damage in the guiding region of the crystal that was caused by the implantation of MeV He ions was investigated by using RBS/channeling technique. The existence of Er3+ ions in Er:KTiOPO4 was verified using total-reflection X-ray fluorescence (TXRF) analysis techniques and the fluorescence spectra of Cr3+ in Cr:KTiOPO4 were measured.