Title of article
The C-type defect on Si(001) as a hydrogen-vacancy complex
Author/Authors
Miyazaki، نويسنده , , Takehide and Uda، نويسنده , , Tsuyoshi and Terakura، نويسنده , , Kiyoyuki، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
48
To page
51
Abstract
An ab initio study is performed for atomic and electronic structures of the C-type defect on Si(001). A complex of a second-layer vacancy with a hydrogen atom is investigated as a structure model of this defect and its electronic structure is presented. Energetics of formation of the complex model are compared with that of its intrinsic counterpart.
Keywords
DEFECT , Hydrogen , Electronic structure , Silicon , surface
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133737
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