Title of article
DLTS analysis of nickel–hydrogen complex defects in silicon
Author/Authors
Shiraishi، نويسنده , , M. and Sachse، نويسنده , , J.-U. and Lemke، نويسنده , , H. and Weber، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
130
To page
133
Abstract
The results of a deep level transient spectroscopy (DLTS) study of nickel–hydrogen complexes in n- and p-type silicon are presented. Hydrogen is incorporated by wet-chemical etching. After etching, eleven electrically active Ni–H related levels are observed. Heat treatment enables us to investigate the thermal stability of Ni–H complexes. Possible structures of the Ni–H defects are proposed.
Keywords
Silicon , transition metal , DLTS , Hydrogen
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133775
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