Title of article
MBE GaN grown on (101) NdGaO3 substrates
Author/Authors
Mamutin، نويسنده , , V.V. and Toropov، نويسنده , , A.A. and Kartenko، نويسنده , , N.F. and Ivanov، نويسنده , , S.V. and Wagner، نويسنده , , A. and Monemar، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
56
To page
59
Abstract
We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO3) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity–voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former.
Keywords
Molecular Beam Epitaxy , Gallium nitride , Photoluminescence , Nitrogen activator , X-ray diffraction , Scanning electron microscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133878
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