Title of article
Features of SiC single-crystals grown in vacuum using the LETI method
Author/Authors
Dmitri D. and Rastegaev، نويسنده , , V.P and Avrov، نويسنده , , D.D and Reshanov، نويسنده , , S.A and Lebedev، نويسنده , , A.O، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
77
To page
81
Abstract
The growth of silicon carbide crystals in vacuum by the LETI method gives 6H and 4H polytypes of n- and p-type conductivity. This is done by the appropriate selection of construction material, doping conditions and crystallography orientation of the growing surface.
Keywords
Silicon carbide crystals , The LETI method , polytypes
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134061
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