Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

A modeling approach for the numerical simulation of heat transfer during SiC sublimation growth in inductively heated PVT-reactors is introduced. The physical model takes into account the volume heat sources induced by the electromagnetic field and the main processes contributing to the conservation equations for mass, momentum and energy. Results of calculations are compared to experimental observations to discuss the validity of the modeling approach. The computed isotherms and their temporal evolution agree with the shape of grown SiC crystals during a growth run.