Monte Carlo simulation of THz frequency power generation in notched n+–n−–n–n+ 4H-SiC structures

Steady state transport and microwave power generation is theoretically investigated in 4H-SiC n+–n−–n–n+ structures along c-axis by Monte Carlo Particle technique. It is predicted that very high power microwave generation in the THz frequency range is possible. This generation is based on the negative differential velocity due to non-parabolicity of the lowest conduction band and the very low carrier diffusion coefficient at high electric fields.