P–N Junction creation in 6H-SiC by aluminum implantation

Bipolar diodes, protected with junction termination extensions, were processed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p+–n junction creation, which led to the material amorphization. The recrystallization variation with the annealing temperature and duration is examined in this paper. We performed the Al implantations with opposite energy orders, in order to study their influence on the diode electrical characteristics. The increasing order led to a better forward conduction, and reverse leakage currents more important.