Title of article
Design of a 600 V silicon carbide vertical power MOSFET
Author/Authors
Planson، نويسنده , , D and Locatelli، نويسنده , , M.L and Lanois، نويسنده , , F and Chante، نويسنده , , J.P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
497
To page
501
Abstract
Silicon carbide (SiC) owns very interesting properties to fulfil the requirements of new power electronic applications. This paper reports the design of two vertical power MOSFETs, able to sustain a forward blocking voltage of 600 V. In order to evaluate the performance, 2D-simulations were performed taking into account the current technological constraints and the SiC materials parameters.
Keywords
silicon carbide , 2D-simulation , Vertical MOSFET
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134157
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