Title of article
The physics of heteroepitaxy of 3C–SiC on Si: role of Ge in the optimization of the 3C–SiC/Si heterointerface
Author/Authors
Masri، نويسنده , , P and Moreaud، نويسنده , , N and Rouhani Laridjani، نويسنده , , M and Calas، نويسنده , , J and Averous، نويسنده , , M and Chaix، نويسنده , , G and Dollet، نويسنده , , A and Berjoan، نويسنده , , R and Dupuy، نويسنده , , C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
535
To page
538
Abstract
We demonstrate that the S-correlated theory of misfit induced superstructures and its continuity criteria, defined within the framework of the elasticity theory, enables to predict the composition of buffer layers which can optimize the 3C–SiC/Si interface. The effect of incorporating Ge atoms to the carbon source is investigated and the results are compared with the experimental results.
Keywords
Misfit related defects , Semiconductor interfaces , Theory , elasticity theory
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134189
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