Semiconductor alloys for monolithic integration with Si microelectronics

We introduce a novel class of semiconductors which is optically active and solves the problems with lattice-constant mismatches and polarity mismatches that are normally an issue in heteroepitaxial growth of III–V alloys on silicon substrates. Using ab initio total energy calculations and quasi-particle GW calculations we examine physical properties of various configurations of these novel materials and identify a particular suitable configuration. This configuration is lattice-constant matched to Si and has a direct band gap very close to the operating wavelength of optical fibers. Therefore, this novel class could lead to monolithic integration of optical materials and Si circuits.