Luminescence and structural properties of porous silicon with ZnSe intimate contact

The incorporation of ZnSe into luminescent porous silicon layers (PSL) by electrochemical co-deposition of Zn and Se is described by focusing on the critical parameters related to the specific nature of porous silicon. The PSL photoluminescence is monitored during the growth of ZnSe to reveal the effects of the process on the optical properties of the structure, allowing an in-situ characterization of the growth. The structure and chemical composition of the resulting nanostructures are investigated by transmission electron microscopy (TEM) and chemical microanalysis which show homogeneous incorporation of ZnSe inside the porous matrix with no segregation. Crystallization of ZnSe by subsequent thermal annealing is also studied and preliminary characterizations of the electrical properties of the resulting nanocomposite structures are presented.