Carbon influence on γ-irradiation induced defects in n-type CZ Si

The study of irradiation effect of γ rays for 60Co source on n-type carbon-free and carbon-rich Czochralski silicon single crystals is presented, based on deep level transient spectroscopy technique. It is shown that generation of vacancy-related defects is significantly enhanced in carbon-rich silicon in respect to carbon-free samples. Divacancy and multivacancy-related defects were particularly enhanced. The observed behavior is discussed and related to the carbon presence in the bulk. Carbon trapping of self-interstitials significantly enhanced vacancy concentration that further caused observed behavior.