Title of article
Transition metal (thin-film)/Si (substrate) contacts: buried interface study by soft X-ray emission spectroscopy
Author/Authors
Wang، نويسنده , , Jinliang and Wang، نويسنده , , Tianmin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
156
To page
159
Abstract
A soft X-ray emission spectroscopy (SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a Mn (thin-film)/Si(substrate) contact system, where the energy of primary electrons, Ep, is varied below 20 keV. An interesting point of this method is that we can have a specific signal for the element to be used as a fingerprint. By using this e-beam excited SXES, we can study an interface buried deep in a rather thick overlayer. The Mn (thin-film)/Si (100) specimen without heat treatment is concluded to have any additional phase except for Mn and Si at the interface region within the limit of the present experiment. The specimen heat treated at 350°C for 3 min is clarified to have layered structure of Mn/MnSi/MnSi1.7/Si (100) form the top to the substrate.
Keywords
Mn-silicides , Buried interface , Nondestructive depth profiling , SXES , Si-L2 , 3 emission band spectra , IEV method
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135256
Link To Document