Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures

The aim of this paper is to present a modified microwave absorption (MWA) technique using the partial filling mode, applicable when lifetime measurements are performed in the perpendicular excitation-probe regime. In this case, the carrier excitation is done by illuminating a cross-section of the layered structure through fiber optics. The excited area is then perpendicularly probed by microwave (MW) radiation when the MW antenna is partially filled with a sample. The potential of this technique is demonstrated on a set of Co-silicided n+-p junction diodes and on epitaxial-Si structures.