• Title of article

    Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance

  • Author/Authors

    Müller، نويسنده , , Heinz-Olaf and Williams، نويسنده , , David A and Mizuta، نويسنده , , Hiroshi and Durrani، نويسنده , , Zahid A.K Durrani، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    36
  • To page
    39
  • Abstract
    Due to their compatibility with CMOS, multiple tunnel junctions (MTJs) are giving rise to an increasing interest in Coulomb blockade silicon devices, along with a higher demand for simulation. Whereas the operating principle has been known for a number of years, here we present new simulation results on MTJs, including geometric island size and island separation. Application of MTJ in a memory cell is discussed.
  • Keywords
    Simulation , Si multiple tunnel junctions , Pinch-off , Ohmic conductance
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2000
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2135321

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2135321