Title of article
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
Author/Authors
Lee، نويسنده , , Ching-Ting and Shyu، نويسنده , , Kuo-Chuan and Lin، نويسنده , , Iang-Jeng and Lin، نويسنده , , Hao-Hsiung Lin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
147
To page
150
Abstract
A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.
Keywords
Multiple quantum barrier (MQB) , InGaP/GaAs , Metal-semiconductor field effect transistor (MESFET)
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135361
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